PHOTOACOUSTIC INVESTIGATION OF SEMICONDUCTORS - INFLUENCE OF CARRIER DIFFUSION AND RECOMBINATION IN PBTE AND SI

被引：68
作者：
NETO, AP [1 ]
VARGAS, H [1 ]
LEITE, NF [1 ]
MIRANDA, LCM [1 ]
机构：
[1] INST PESQUISAS ESPACIAIS,ASSOCIADO SENSORES & MAT LAB,BR-12201 SAO JOSE CAMPOS,SP,BRAZIL
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.40.3924
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3924 / 3930
页数：7
相关论文
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