CONDUCTIVITY ANISOTROPY + HOT ELECTRON TEMPERATURE IN SILICON

被引：21

作者：

GIBBS, WEK

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1964年 / 25卷 / 02期

关键词：

D O I：

10.1016/0022-3697(64)90085-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：247 / &

共 13 条

[1] ANISOTROPY IN CONDUCTIVITY OF HOT HOLES IN GERMANIUM [J].

GIBBS, WEK .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3369-&

[2] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[3]

KLOSE W, 1961, ANN PHYS, V8, P287

[4] EFFECT OF HIGH PRESSURE ON SOME HOT ELECTRON PHENOMENA IN N-TYPE GERMANIUM [J].

KOENIG, SH ;

NATHAN, MI ;

PAUL, W ;

SMITH, AC .

PHYSICAL REVIEW, 1960, 118 (05) :1217-1221

[5]

KOENIG SH, 1959, P PHYS SOC LOND, VB 73, P959

[6] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J].

LONG, D .

PHYSICAL REVIEW, 1960, 120 (06) :2024-2032

[7]

PAIGE EGS, 1960, P PHYS SOC LOND, VB 75, P174

[8] MILLIMETER CYCLOTRON RESONANCE IN SILICON [J].

RAUCH, CJ ;

STICKLER, JJ ;

ZEIGER, HJ ;

HELLER, GS .

PHYSICAL REVIEW LETTERS, 1960, 4 (02) :64-66

[9] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J].

REIK, HG ;

RISKEN, H .

PHYSICAL REVIEW, 1962, 126 (05) :1737-&

[10] DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS [J].

REIK, HG ;

RISKEN, H .

PHYSICAL REVIEW, 1961, 124 (03) :777-&

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