EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION-IMPLANTATION

被引：80

作者：

BRAUNSTEIN, G ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2106 / 2108

页数：3

共 15 条

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[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J].

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[8] A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION [J].

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[9] HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J].

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[10]

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