EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION-IMPLANTATION

[1] BERMAN R, 1965, PHYSICAL PROPERTIES

[2] CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 691 - 697

[3] DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 416 - 418

[4] DEPTH PROFILE OF ANTIMONY IMPLANTED INTO DIAMOND [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5731 - 5735

[5] RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 139 - 144

[6] Davidson L. A., 1971, Radiation Effects, V7, P35, DOI 10.1080/00337577108232562

[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6870 - 6872

[8] A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 153 - 168

[9] HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1758 - 1769

[10] Vavilov V. S., 1976, Soviet Physics - Uspekhi, V19, P301, DOI 10.1070/PU1976v019n04ABEH005251

[1] BERMAN R, 1965, PHYSICAL PROPERTIES

[2] CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 691 - 697

[3] DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 416 - 418

[4] DEPTH PROFILE OF ANTIMONY IMPLANTED INTO DIAMOND [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5731 - 5735

[5] RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 139 - 144

[6] Davidson L. A., 1971, Radiation Effects, V7, P35, DOI 10.1080/00337577108232562

[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6870 - 6872

[8] A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 153 - 168

[9] HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1758 - 1769

[10] Vavilov V. S., 1976, Soviet Physics - Uspekhi, V19, P301, DOI 10.1070/PU1976v019n04ABEH005251