A DISCUSSION ON IGBT SHORT-CIRCUIT BEHAVIOR AND FAULT PROTECTION SCHEMES

被引:211
作者
CHOKHAWALA, RS [1 ]
CATT, J [1 ]
KIRALY, L [1 ]
机构
[1] INTERNATL RECTIFIER CORP,DEPT APPLICAT ENGN,EL SEGUNDO,CA 90245
关键词
D O I
10.1109/28.370271
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
IGBT's are available with short-circuit withstand times approaching those of bipolar transistors, These IGBT's can therefore be protected by the same relatively slow-acting circuitry, The more efficient IGBT's, however, have lower short-circuit withstand times. While protection of these types of IGBT's is not difficult, it does require a reassessment of the traditional protection methods used for the bipolar transistors, An in-depth discussion on the behavior of IGBT's under different short-circuit conditions is carried out and the effects of various parameters on permissible short-circuit time are analyzed, The paper also rethinks the problem of providing short-circuit protection in relation to the special characteristics of the most efficient IGBT's. The pros and cons of some of the existing protection circuits are discussed and, based on the recommendations, a protection scheme is implemented to demonstrate that reliable short-circuit protection of these types of IGBT's can be achieved without difficulty in a PWM motor-drive application.
引用
收藏
页码:256 / 263
页数:8
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