POINT-DEFECT KINETICS AND DOPANT DIFFUSION DURING SILICON OXIDATION

被引：3

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：627 / 629

页数：3

共 13 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[2] KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].

FAHEY, P ;

BARBUSCIA, G ;

MOSLEHI, M ;

DUTTON, RW .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786

[3]

FAIR RB, 1981, APPLIED SOLID STAT B, V2, P1

[4]

GOSELE U, 1983, DEFECTS SEMICONDUCTO, V2, P45

[5] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[6] THE ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN SILICON BY THERMAL-OXIDATION [J].

ISHIKAWA, Y ;

SAKINA, Y ;

TANAKA, H ;

MATSUMOTO, S ;

NIIMI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :644-648

[7]

MASSOUD HZ, 1982, THIN OXIDE GROWTH DR, P194

[8] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J].

MATHIOT, D ;

PFISTER, JC .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3518-3530

[9]

Mathiot D., 1985, Impurity Diffusion and Gettering in Silicon Symposium, P117

[10] OXIDATION ENHANCED AND CONCENTRATION DEPENDENT DIFFUSIONS OF DOPANTS IN SILICON [J].

MATSUMOTO, S ;

ISHIKAWA, Y ;

NIIMI, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5049-5054

← 1 2 →