EFFECTS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH-CONDITIONS ON THE GAAS/GE SOLAR-CELL PROPERTIES

被引：8

作者：

CHEN, JC ^{[1
]}

RISTOW, ML ^{[1
]}

CUBBAGE, JI ^{[1
]}

WERTHEN, JG ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,RES CTR,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effects of metalorganic chemical vapor deposition (MOCVD) growth conditions on the properties of GaAs solar cells grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/Ge interface was altered from active to passive. Only a narrow temperature window (600-630-degrees-C) for the initial GaAs layer growth gave the passive-Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AM0) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge.

引用

页码：2282 / 2284

页数：3

共 9 条

[1]

HART RE, 1988, 20TH C REC IEEE PHOT, P764

[2] HIGH-EFFICIENCY (GREATER-THAN 20-PERCENT-AMO) GAAS SOLAR-CELLS GROWN ON INACTIVE-GE SUBSTRATES [J].