CHARACTERIZATION OF NANOSTRUCTURES BY REFLECTION ELECTRON-MICROSCOPY

被引:3
|
作者
SCHERER, A
VANDERGAAG, BP
机构
关键词
D O I
10.1063/1.102867
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use reflection electron microscopy (REM) to analyze ion-etched nanostructures defined in compound semiconductor heterostructures. This nondestructive imaging technique allows us to characterize 10-nm-wide features with high resolution and determine their sidewall morphology on a 1 nm scale. In addition to the inherent high-resolution available from REM, we also obtain diffraction contrast from the heterostructure material, and we can image quantum wells. We routinely use this technique to characterize and accurately measure microfabricated structures with lateral dimensions below 20 nm.
引用
收藏
页码:2566 / 2568
页数:3
相关论文
共 50 条