THE USE OF NITROGEN FLOW AS A DEPOSITION RATE CONTROL IN REACTIVE SPUTTERING

被引：71

作者：

BERG, S

LARSSON, T

BLOM, HO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573855

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：594 / 597

页数：4

共 11 条

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[2]

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[8] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J].

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[9] REACTIVE MAGNETRON SPUTTERING OF TITANIUM AND ITS OXIDES [J].

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[10]

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