EXCITON LOCALIZATION IN SUBMONOLAYER INAS/GAAS MULTIPLE QUANTUM-WELLS

被引：76
作者：
CINGOLANI, R
BRANDT, O
TAPFER, L
SCAMARCIO, G
LAROCCA, GC
PLOOG, K
机构：
[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80
来源：
PHYSICAL REVIEW B | 1990年 / 42卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.42.3209
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix. © 1990 The American Physical Society.
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页码：3209 / 3212
页数：4
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