EFFECT OF HEATING RATE AND ANNEALING TEMPERATURE ON TWIN FORMATION IN AS+ IMPLANTED (111) SILICON

被引：0
作者：
SHIH, YC
WASHBURN, J
SHATAS, SC
机构：
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA
[2] AG ASSOCIATES, PALO ALTO, CA 94303 USA
来源：
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | 1984年 / 463卷
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
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页码：93 / 98
页数：6
相关论文
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