OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE

被引：505
作者：
BOUSSE, L [1 ]
DEROOIJ, NF [1 ]
BERGVELD, P [1 ]
机构：
[1] TWENTE UNIV TECHNOL,DEPT ELECT ENGN,BIOSENSORS GRP,7500 AE ENSCHEDE,NETHERLANDS
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 10期
关键词：
D O I：
10.1109/T-ED.1983.21284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1263 / 1270
页数：8
相关论文
共 46 条
[1]   ISFETS USING INORGANIC GATE THIN-FILMS [J].
ABE, H ;
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944
[2]  
AHMED SM, 1972, OXIDES OXIDE FILMS, V1, P319
[3]   CHARGE INJECTION IN MAOS SYSTEMS [J].
BALK, P ;
STEPHANY, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1634-+
[4]   DEPENDENCE OF INTERFACE STATE PROPERTIES OF ELECTROLYTE-SIO2-SI STRUCTURES ON PH [J].
BARABASH, PR ;
COBBOLD, RSC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :102-108
[5]   DEVELOPMENT, OPERATION, AND APPLICATION OF ION-SENSITIVE FIELD-EFFECT TRANSISTOR AS A TOOL FOR ELECTROPHYSIOLOGY [J].
BERGVELD, P .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1972, BM19 (05) :342-&
[6]   DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].
BERGVELD, P .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&
[7]   ELECTRONIC-CIRCUIT-DESIGN PRINCIPLES FOR PARAMETER CONTROL OF ISFETS AND RELATED DEVICES [J].
BERGVELD, P .
MEDICAL & BIOLOGICAL ENGINEERING & COMPUTING, 1979, 17 (05) :655-661
[8]   ADSORPTION AT RUTILE-SOLUTION INTERFACE .I. THERMODYNAMIC AND EXPERIMENTAL STUDY [J].
BERUBE, YG ;
DEBRUYN, PL .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1968, 27 (02) :305-&
[9]   THE SOLID-LIQUID INTERFACE [J].
BOOTSMA, GA ;
DEROOIJ, NF ;
VANSILFHOUT, A .
SENSORS AND ACTUATORS, 1981, 1 (02) :111-136
[10]   SINGLE ELECTRODE-POTENTIALS RELATED TO FLAT-BAND VOLTAGE MEASUREMENTS ON EOS AND MOS STRUCTURES [J].
BOUSSE, L .
JOURNAL OF CHEMICAL PHYSICS, 1982, 76 (10) :5128-5133
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