Photoemission Study of the Electronic Structure of Cadmium Telluride (CdTe)

被引:0
作者
Akinlami, Johnson O. [1 ]
Awobode, Ayo M. [2 ]
机构
[1] Univ Agr, Dept Phys, PMB 2240, Abeokuta, Ogun State, Nigeria
[2] Univ Ibadan, Dept Phys, Ibadan, Nigeria
来源
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2013年 / 8卷 / 2-3期
关键词
Photoemission spectroscopy; Electronic structure; Superconductor; Energy level difference;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here we report the electronic structure of Cadmium Telluride CdTe. The theoretical photoemission (PES) spectrum at h omega= 21.2eV shows two distinct structures with peaks at about -9.7 eV as most prominent peak and at -16.5eV. Each of these peaks represent the peak of a distinct band, so, the theoretical photoemission (PES) spectrum shows two distinct bands. On the basis of the results of band structure calculation, these structures are interpreted to be associated with the density of states features. The peak at -16.5eV comes from symmetry point X-6 at -9.2 eV, the peak at -9.7eV which is the most prominent peak arises from L-4,L-5 at -0.6 eV. Peak at -9.7eV and at -16.5eV are separated by an energy gap or (energy level difference) of -6.9 eV. Finally, the energy gap (or energy level difference) between two peaks for CdTe fell within the range -0.5 eV to -7.5 eV indicating that it could be used for the development of solid-state devices such as blue light emitting diodes, lasers, solar cells and micro-wave.
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页码:211 / 218
页数:8
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