QUANTIFICATION OF THE MEMORY IMPRINT EFFECT FOR A CHARGED-PARTICLE ENVIRONMENT

被引：19

作者：

BHUVA, BL ^{[1
]}

JOHNSON, RL ^{[1
]}

GYURCSIK, RS ^{[1
]}

FERNALD, KW ^{[1
]}

KERNS, SE ^{[1
]}

STAPOR, WJ ^{[1
]}

CAMPBELL, AB ^{[1
]}

XAPSOS, MA ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1414 / 1418

页数：5

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