CHEMICAL BONDING, ADATOM-ADATOM INTERACTION, AND REPLACEMENT REACTION OF COLUMN-3 METALS ON GAAS(110)

被引：52
作者：
SKEATH, P [1 ]
LINDAU, I [1 ]
SU, CY [1 ]
SPICER, WE [1 ]
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
来源：
PHYSICAL REVIEW B | 1983年 / 28卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.28.7051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7051 / 7067
页数：17
相关论文
共 52 条
[1]   INTERFACE STATES AT GA-GAAS INTERFACE [J].
BACHRACH, RZ ;
BIANCONI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528
[2]   METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343
[3]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[4]   SURFACE-REACTIONS AND INTERDIFFUSION [J].
BACHRACH, RZ ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153
[5]  
BACHRACH RZ, 1979, 1978 P C PHYS SEM, P1073
[6]   ELECTRONIC-PROPERTIES OF GA/GAAS(110) UPON INTERFACE FORMATION [J].
BOLMONT, D ;
CHEN, P ;
SEBENNE, CA .
SURFACE SCIENCE, 1982, 117 (1-3) :417-425
[7]   LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110) [J].
CARELLI, J ;
KAHN, A .
SURFACE SCIENCE, 1982, 116 (02) :380-390
[8]   CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].
CHADI, DJ ;
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163
[9]   ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM [J].
CHELIKOWSKY, JR ;
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1981, 23 (08) :4013-4022
[10]   SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
LOUIE, SG ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644
123456