MAGNETOPLASMA REFLECTIVITY STUDIES ON CD3AS2

被引:6
作者
SCHLEIJPEN, HMA [1 ]
VONORTENBERG, M [1 ]
GELTEN, MJ [1 ]
BLOM, FAP [1 ]
机构
[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS
来源
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1984年 / 5卷 / 02期
关键词
D O I
10.1007/BF01417648
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:171 / 183
页数:13
相关论文
共 15 条
[1]  
Blom F. A. P., 1980, LECTURE NOTES PHYSIC, V133, P191
[2]  
BOGENSCHUTZ AF, 1967, AETZPRAXIS HALBLEITE
[3]   OPTICAL VERIFICATION OF THE VALENCE BAND-STRUCTURE OF CADMIUM ARSENIDE [J].
GELTEN, MJ ;
VANES, CM ;
BLOM, FAP ;
JONGENEELEN, JWF .
SOLID STATE COMMUNICATIONS, 1980, 33 (08) :833-836
[4]  
GELTEN MJ, 1981, P INT C PHYS NARR GA, P167
[5]  
GELTEN MJ, 1980, 1ST P S PHYS CHEM 2
[6]  
GONCHARENKO GI, 1972, SOV PHYS SEMICOND+, V5, P1431
[7]  
HAIDEMEN.ED, 1966, J PHYS SOC JPN, VS 21, P189
[8]   CALCULATION OF IR REFLECTION SPECTRA OF INHOMOGENEOUSLY DOPED SEMICONDUCTORS [J].
HILD, E ;
GROFCSIK, A .
INFRARED PHYSICS, 1978, 18 (01) :23-33
[9]  
KONINGS L, 1982, INTERNAL REPORT EIND
[10]  
KOTTHAUS JP, 1981, PHYSICS HIGH MAGNETI, P118