ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS

被引:89
作者
LEDEBO, LA [1 ]
RIDLEY, BK [1 ]
机构
[1] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 27期
关键词
D O I
10.1088/0022-3719/15/27/003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L961 / L964
页数:4
相关论文
共 26 条
[21]  
RIDLEY BK, 1982, UNPUB J PHYS C
[22]   EPR DETERMINATION OF THE CONCENTRATION OF CHROMIUM CHARGE STATES IN SEMI-INSULATING GAAS-CR [J].
STAUSS, GH ;
KREBS, JJ ;
LEE, SH ;
SWIGGARD, EM .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6251-6252
[23]   QUANTUM DIELECTRIC THEORY OF ELECTRONEGATIVITY IN COVALENT SYSTEMS .2. IONIZATION POTENTIALS AND INTERBAND TRANSITION ENERGIES [J].
VANVECHT.JA .
PHYSICAL REVIEW, 1969, 187 (03) :1007-+
[24]   QUANTUM DIELECTRIC THEORY OF ELECTRONEGATIVITY IN COVALENT SYSTEMS .I. ELECTRONIC DIELECTRIC CONSTANT [J].
VANVECHTEN, JA .
PHYSICAL REVIEW, 1969, 182 (03) :891-+
[25]   COMPLEX NATURE OF COPPER ACCEPTOR IN GALLIUM ARSENIDE [J].
WILLMANN, F ;
BLATTE, M ;
QUEISSER, HJ ;
TREUSCH, J .
SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2281-&
[26]  
YANG XZ, 1982, COMMUNICATION