ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS

被引：89

作者：

LEDEBO, LA ^{[1
]}

RIDLEY, BK ^{[1
]}

机构：

[1] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 27期

关键词：

D O I：

10.1088/0022-3719/15/27/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L961 / L964

页数：4

共 26 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769

[3]

BACKMANN KH, 1981, ANN REV MATER SCI, V11, P441

[4] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

CRAFORD, MG ;

SHAW, RW ;

HERZOG, AH ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&

[5]

Eaves L., 1980, Semi-Insulating III-V Materials, P145

[6] THERMAL-EXCITATION AND OPTICAL-EXCITATION PROCESSES IN GAP-CU [J].

FAGERSTROM, PO ;

GRIMMEISS, HG ;

TITZE, H .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3341-3347

[7] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J].

FISCHER, TE .

PHYSICAL REVIEW, 1966, 142 (02) :519-&

[8]

Fung S., 1980, Semi-Insulating III-V Materials, P154

[9] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

[10]

JAMES LW, 1970, PHYS REV B, V1, P3988

← 1 2 3 →