ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS

被引：6

作者：

KRINGHOJ, P ^{[1
]}

GLASKO, JM ^{[1
]}

ELLIMAN, RG ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECTR MAT ENGN,CANBERRA,ACT 0200,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00499-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of ion irradiation on the strain in GexSi1-x strained layers is examined as a function of ion-fluence and irradiation temperature. It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatures causes a decrease in the perpendicular strain. In both cases, subsequent thermal annealing reduces the damage induced component of the strain. This behaviour is discussed in terms of the nature of the radiation damage produced in the different temperature regimes.

引用

页码：276 / 280

页数：5

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