LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP ON SI(001)

被引：96

作者：

GRUNDMANN, M

KROST, A

BIMBERG, D

机构：

[1] Institut für Festkörperphysik I, Technische Universität Berlin, D-1000 Berlin 12

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report successful growth of antiphase domain-free InP on Si(001) without any preannealing of the Si substrate using low-pressure metalorganic chemical vapor deposition in contrast to present belief that high-temperature substrate annealing prior to growth is imperative to achieve this goal. Optimized crystallographic and optical properties are obtained for an offcut along [11BAR0] of 4-degrees +/- 0.4-degrees, an InP buffer layer temperature of 400-degrees-C +/- 10-degrees-C, a layer deposition temperature of 640-degrees-C, and low growth rates r less-than-or-equal-to 127-mu-m/h.

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页码：284 / 286

页数：3

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