PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS

被引：29

作者：

NISHIZAWA, J

KOKUBUN, Y

SHIMAWAKI, H

KOIKE, M

机构：

[1] SEMICOND RES INST,SENDAI 980,JAPAN

[2] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114257

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1939 / 1942

页数：4

共 8 条

[1]

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[3] VAPOR-PHASE EQUILIBRIA IN SYSTEMS IN-INCL3 AND GA-GACL3 [J].

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[4] ON THE REACTION-MECHANISM OF GAAS MOCVD [J].

NISHIZAWA, J ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417

[5] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J].

NISHIZAWA, J ;

NIHIRA, H .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :82-89

[6]

NISHIZAWA J, 1961, J METALL SOC JPN, V25, P177

[7]

NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149

[8] ANOMALOUS VAPOR TRANSPORT REACTION OF GAAS WITH ASCL3 IN H2 GAS-FLOW SYSTEM [J].

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) :1451-1458

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