CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES

被引：82
作者：
BARTELS, F
MONCH, W
机构：
来源：
SURFACE SCIENCE | 1984年 / 143卷 / 2-3期
关键词：
D O I：
10.1016/0039-6028(84)90545-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：315 / 341
页数：27
相关论文
共 48 条
[41]   HYPERFINE INTERACTION OF ADSORBED O-2 WITH GAAS SURFACE ATOMS [J].
STAUSS, GH ;
KREBS, JJ .
PHYSICS LETTERS A, 1974, A 50 (01) :49-50
[42]   SURFACE EXAFS INVESTIGATION OF OXYGEN-CHEMISORPTION ON GAAS(110) [J].
STOHR, J ;
BAUER, RS ;
MCMENAMIN, JC ;
JOHANSSON, LI ;
BRENNAN, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1195-1199
[43]   PHOTOEMISSION-STUDIES OF THE INTERACTION OF OXYGEN WITH GAAS(110) [J].
SU, CY ;
LINDAU, I ;
CHYE, PW ;
SKEATH, PR ;
SPICER, WE .
PHYSICAL REVIEW B, 1982, 25 (06) :4045-4068
[44]   DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].
SUZUKI, T ;
OGAWA, M .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :473-475
[45]   AUGER ELECTRON SPECTROSCOPY OF CLEAN GALLIUM ARSENIDE [J].
UEBBING, JJ ;
TAYLOR, NJ .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :804-&
[46]   ADSORPTION OF TYPE-III AND TYPE-V ELEMENTS ON GAAS (110) [J].
VANLAAR, J ;
HUIJSER, A ;
VANROOY, TL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1164-1167
[47]   ELECTRONIC SURFACE PROPERTIES OF GA AND IN CONTAINING 3-5 COMPOUNDS [J].
VANLAAR, J ;
HUIJSER, A ;
VANROOY, TL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :894-898
[48]   PHOTON ENHANCED OXIDATION OF SILICON [J].
YOUNG, EM ;
TILLER, WA .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :63-65
12345