IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE

被引：57

作者：

BURRUS, CA ^{[1
]}

BOWERS, JE ^{[1
]}

TUCKER, RS ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL LABS,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 07期

关键词：

D O I：

10.1049/el:19850186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：262 / 263

页数：2

共 9 条

[1] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J].

BURRUS, CA ;

DENTAI, AG ;

LEE, TP .

ELECTRONICS LETTERS, 1979, 15 (20) :655-657

[2] SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J].

CAMPBELL, JC ;

BURRUS, CA ;

DENTAI, AG ;

OGAWA, K .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :820-821

[3] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[4] INGAAS PIN PHOTODIODE FABRICATED ON SEMI-INSULATING INP SUBSTRATE FOR MONOLITHIC INTEGRATION [J].

LI, K ;

REZEK, E ;

LAW, HD .

ELECTRONICS LETTERS, 1984, 20 (05) :196-198

[5] COLOR-CENTER LASER GENERATES PICOSECOND PULSES AND SEVERAL WATTS CW OVER THE 1.24-1.45-MU-M RANGE [J].

MOLLENAUER, LF ;

BLOOM, DM .

OPTICS LETTERS, 1979, 4 (08) :247-249

[6] 100 GHZ BANDWIDTH PLANAR GAAS SCHOTTKY PHOTO-DIODE [J].

WANG, SY ;

BLOOM, DM .

ELECTRONICS LETTERS, 1983, 19 (14) :554-555

[7] 20-GHZ BANDWIDTH GAAS PHOTO-DIODE [J].

WANG, SY ;

BLOOM, DM ;

COLLINS, DM .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :190-192

[8] MEASUREMENT OF VERY-HIGH-SPEED PHOTODETECTORS WITH PICOSECOND INGAASP FILM LASERS [J].

WIESENFELD, JM ;

CHRAPLYVY, AR ;

STONE, J ;

BURRUS, CA .

ELECTRONICS LETTERS, 1983, 19 (01) :22-24

[9]

WINDHORN TH, 1982, J ELECTRON MATER, V11, P1065, DOI 10.1007/BF02658917

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