ELECTRICAL-CONDUCTION IN A TIN-OXIDE-SILICON INTERFACE PREPARED BY SPRAY PYROLYSIS

被引:12
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CHAUDHURI, UR
RAMKUMAR, K
SATYAM, M
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10.1063/1.344396
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O59 [应用物理学];
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页码:1748 / 1752
页数:5
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共 7 条
[1]   SPRAY-DEPOSITED ITO-SILICON SIS HETEROJUNCTION SOLAR-CELLS [J].
ASHOK, S ;
SHARMA, PP ;
FONASH, SJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :725-730
[2]  
CHANG NS, 1979, J APPL PHYS, V49, P4833
[3]   EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J].
DUBOW, JB ;
BURK, DE ;
SITES, JR .
APPLIED PHYSICS LETTERS, 1976, 29 (08) :494-496
[4]  
NAGATOMO T, 1979, JPN J APPL PHYS, V1, P1103
[5]  
RIBEN AR, 1966, SOLID STATE ELECTRON, V9, P1053
[6]  
SHEWCHUN J, 1974, SOLID STATE ELECT, V17, P551
[7]   ELECTRICAL CHARACTERISTICS OF SILICON-TIN OXIDE HETEROJUNCTIONS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
VARMA, S ;
RAO, KV ;
KAR, S .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2812-2822