ANALYSIS AND EXPERIMENTATION ON FIMOS (N-CHANNEL FAMOS) DEVICES

被引:7
作者
HAGIWARA, T [1 ]
TAKEDA, E [1 ]
HORIUCHI, M [1 ]
KONDO, R [1 ]
ITOH, Y [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
关键词
D O I
10.7567/JJAPS.16S1.211
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:211 / 214
页数:4
相关论文
共 4 条
[1]  
GEAR G, 1976, RELIABILITY PHYSICS
[2]  
LEE GA, 1964, PHYS REV, V134, pA761
[3]   ELECTRICALLY REPROGRAMABLE NONVOLATILE SEMICONDUCTOR MEMORY [J].
TARUI, Y ;
NAGAI, K ;
HAYASHI, Y .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :369-&
[4]  
TARUI Y, 1972, J JAP SOC APPL PHY S, V41, P155