LOCALIZED LEVELS AND LUMINESCENCE OF AB2X4 SEMICONDUCTING COMPOUNDS

被引：38
作者：
GUZZI, M [1 ]
GRILLI, E [1 ]
机构：
[1] CNR, GRP NAZL STRUTTURA MAT, I-20133 MILAN, ITALY
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1984年 / 11卷 / 03期
关键词：
D O I：
10.1016/0254-0584(84)90063-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：295 / 304
页数：10
相关论文
共 36 条
[1]  
ABDULLAEV GB, 1973, SOV PHYS SEMICOND+, V7, P717
[2]  
ALLAKHVERDIEV KP, 1972, SOV PHYS SEMICOND+, V5, P2080
[3]   PHOTOCONDUCTIVITY AND TRAP DISTRIBUTION IN CDIN2S4 [J].
ANEDDA, A ;
GARBATO, L ;
RAGA, F ;
SERPI, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 50 (02) :643-650
[4]   FUNDAMENTAL OPTICAL-CONSTANTS OF THE LAYERED SEMICONDUCTOR ZNIN2S4 [J].
ANEDDA, A ;
CUGUSI, L ;
GRILLI, E ;
GUZZI, M ;
RAGA, F ;
SPIGA, A .
SOLID STATE COMMUNICATIONS, 1979, 29 (12) :829-834
[5]   TRANSPORT PROPERTIES OF CDIN2S4 SINGLE-CRYSTALS [J].
ARESTI, A ;
CONGIU, A .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :K55-K58
[6]   ABSORPTION-EDGE AND THERMOREFLECTANCE STUDIES OF CDGA2SE4 [J].
BACEWICZ, R ;
TRYKOZKO, R ;
BORGHESI, A ;
CAMBIAGHI, M ;
REGUZZONI, E .
PHYSICS LETTERS A, 1979, 75 (1-2) :121-124
[7]   OPTICAL AND ELECTRICAL PROPERTIES OF TERNARY CHALCOGENIDES [J].
BEUN, JA ;
LICHTENSTEIGER, M ;
NITSCHE, R .
PHYSICA, 1961, 27 (05) :448-&
[8]   PHOTOCONDUCTIVITY IN TERNARY SULFIDES [J].
BEUN, JA ;
NITSCHE, R ;
LICHTENSTEIGER, M .
PHYSICA, 1960, 26 (08) :647-649
[9]  
Czaja W., 1970, Physik der Kondensierten Materie, V10, P299, DOI 10.1007/BF02422849
[10]   TRANSPORT PROPERTIES OF CDIN2S4 SINGLE-CRYSTALS [J].
ENDO, S ;
IRIE, T .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (02) :201-209
1234