GAIN SWITCHING OF SEMICONDUCTOR INJECTION-LASERS

被引：156
作者：
LAU, KY
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期
关键词：
D O I：
10.1063/1.99486
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：257 / 259
页数：3
相关论文
共 24 条
[1]   PICOSECOND PULSE GENERATION (LESS-THAN-1.8 PS) IN A QUANTUM-WELL LASER BY A GAIN SWITCHING METHOD [J].
ARAKAWA, Y ;
SOGAWA, T ;
NISHIOKA, M ;
TANAKA, M ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1295-1297
[2]  
ARAKAWA Y, 1984, APPL PHYS LETT, V45, P204
[3]   THE EFFECT OF CAVITY LENGTH ON PICOSECOND PULSE GENERATION WITH HIGHLY RF MODULATED ALGAAS DOUBLE HETEROSTRUCTURE LASERS [J].
ASPIN, GJ ;
CARROLL, JE ;
PLUMB, RG .
APPLIED PHYSICS LETTERS, 1981, 39 (11) :860-861
[4]   PICOSECOND OPTICAL PULSE GENERATION AT GIGAHERTZ RATES BY DIRECT MODULATION OF A SEMICONDUCTOR-LASER [J].
AUYEUNG, J .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :308-310
[5]   GENERATION OF 4 PS LIGHT-PULSES FROM DIRECTLY MODULATED V-GROOVE LASERS [J].
BIMBERG, D ;
KETTERER, K ;
SCHOLL, HE ;
VOLLMER, HP .
ELECTRONICS LETTERS, 1984, 20 (08) :343-345
[6]   GAIN MODULATION OF UNBIASED SEMICONDUCTOR-LASERS - ULTRASHORT LIGHT-PULSE GENERATION IN THE 0.8-MU-M-1.3-MU-M WAVELENGTH RANGE [J].
BIMBERG, D ;
KETTERER, K ;
BOTTCHER, EH ;
SCHOLL, E .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (01) :23-45
[7]   EFFECT OF GAIN SATURATION ON INJECTION-LASER SWITCHING [J].
CHANNIN, DJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3858-3860
[8]   AN ANALYSIS OF GAIN-SWITCHED SEMICONDUCTOR-LASERS GENERATING PULSE-CODE-MODULATED LIGHT WITH A HIGH BIT RATE [J].
DEMOKAN, MS ;
NACAROGLU, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (09) :1016-1022
[9]   PICOSECOND DYNAMICS OF A GAIN-SWITCHED INGAASP LASER [J].
DOWNEY, PM ;
BOWERS, JE ;
TUCKER, RS ;
AGYEKUM, E .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :1039-1047
[10]  
GOBEL EO, 1983, APPL PHYS LETT, V42, P25, DOI 10.1063/1.93752
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