LEED STUDIES OF SURFACE IMPERFECTIONS

[11] ESTRUP PJ, 1980, ORDERING 2 DIMENSION, P39

[12] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[13] LEED-INVESTIGATIONS AND WORK-FUNCTION MEASUREMENTS OF THE 1ST STAGES OF EPITAXY OF TUNGSTEN ON TUNGSTEN(110) [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2079 - 2084

[14] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[15] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

[16] TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING [J]. SURFACE SCIENCE, 1970, 22 (01) : 12 - &

[17] QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J]. SURFACE SCIENCE, 1978, 73 (01) : 240 - 251

[18] ATOMIC STEPS ON SINGLE-CRYSTALS - EXPERIMENTAL METHODS AND PROPERTIES [J]. APPLIED PHYSICS, 1976, 9 (01): : 11 - 17

[19] HENZLER M, 1977, ELECTRON SPECTROSCOP

[20] HENZLER M, 1970, SURF SCI, V19, P169

[11] ESTRUP PJ, 1980, ORDERING 2 DIMENSION, P39

[12] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[13] LEED-INVESTIGATIONS AND WORK-FUNCTION MEASUREMENTS OF THE 1ST STAGES OF EPITAXY OF TUNGSTEN ON TUNGSTEN(110) [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2079 - 2084

[14] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[15] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

[16] TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING [J]. SURFACE SCIENCE, 1970, 22 (01) : 12 - &

[17] QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J]. SURFACE SCIENCE, 1978, 73 (01) : 240 - 251

[18] ATOMIC STEPS ON SINGLE-CRYSTALS - EXPERIMENTAL METHODS AND PROPERTIES [J]. APPLIED PHYSICS, 1976, 9 (01): : 11 - 17

[19] HENZLER M, 1977, ELECTRON SPECTROSCOP

[20] HENZLER M, 1970, SURF SCI, V19, P169