POSITRON-ANNIHILATION AT THE SI/SIO2 INTERFACE

被引：14

作者：

LEUNG, TC ^{[1
]}

WEINBERG, ZA ^{[1
]}

ASOKAKUMAR, P ^{[1
]}

NIELSEN, B ^{[1
]}

RUBLOFF, GW ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S(int)) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S(int) depends directly on holes at interface states or traps at the Si/SiO2 interface.

引用

页码：530 / 532

页数：3

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