SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY

被引：19
作者：
FEENSTRA, RM
OEHRLEIN, GS
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词：
D O I：
10.1116/1.583068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1136 / 1137
页数：2
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