LOW-ENERGY ION-BOMBARDMENT ON C-GE SURFACES

被引：2

作者：

DEKKER, J

ZANDVLIET, HJW

VANSILFHOUT, A

机构：

[1] University of Twente, Faculty of Applied Physics, 7500 AE Enschede

来源：

VACUUM | 1990年 / 41卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(90)94056-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous germanium thin films (25-60-angstrom) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probably composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).

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页码：1690 / 1691

页数：2

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