DEPTH PROFILES OF HYDROGEN AND OXYGEN IN HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

被引：8

作者：

SIE, SH

MCKENZIE, DR

SMITH, GB

RYAN, CG

机构：

[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA

[2] NEW S WALES INST TECHNOL,DEPT PHYS,SYDNEY,NSW 2007,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90356-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：525 / 529

页数：5

共 14 条

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ORRE, B .

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[8]

REUTER W, 1983, NUCL INSTRUM METHODS, V218, P391, DOI 10.1016/0167-5087(83)91011-6

[9] SURFACE CONTRIBUTIONS TO THE 2-LAYER STRUCTURE IN THE PLASMA DEPOSITION OF A-SI-H [J].

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KLEMBERGSAPIEHA, J ;

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SCHREIBER, HP ;

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PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (04) :L47-L52

[10]

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