LONG LIFETIME PHOTOCONDUCTIVITY IN SEMI-INSULATING BULK GAAS

被引：21

作者：

JIMENEZ, J ^{[1
]}

HERNANDEZ, P ^{[1
]}

DESAJA, JA ^{[1
]}

BONNAFE, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 05期

关键词：

D O I：

10.1016/0038-1098(85)90850-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：459 / 462

页数：4

共 50 条

[41] PHOTOVOLTAIC EFFECTS IN SEMI-INSULATING GAAS [J].

ZUCCA, R ;

WOOD, EJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1396-1398

[42] ANOMALOUS ELECTROABSORPTION IN SEMI-INSULATING GAAS [J].

WALPITA, LM .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5495-5499

[43] Slow domains in semi-insulating GaAs [J].

Neumann, A .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :1-26

[44] AC CONDUCTIVITY IN SEMI-INSULATING GAAS [J].

KRISTOFIK, J ;

MARES, JJ ;

SMID, V ;

ZEMAN, J .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 88 (02) :K187-K190

[45] SEMI-INSULATING GAAS IN UHF ELECTRONICS [J].

MILVIDSKII, MG ;

OSVENSKII, VB ;

SHERSHAKOVA, IN .

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10) :5-17

[46] Electricity compensation of semi-insulating GaAs [J].

Pan Tao Ti Hsueh Pao, 11 (999-1003)

[47] DEPLETION EFFECTS IN SEMI-INSULATING GAAS [J].

WALDROP, JR ;

ZUCCA, R ;

WEN, CP .

APPLIED PHYSICS LETTERS, 1975, 26 (06) :322-324

[48] INJECTION OF ELECTRONS INTO SEMI-INSULATING GAAS [J].

HRIVNAK, L .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 37 (01) :K1-K4

[49] Stoichiometric defects in semi-insulating GaAs [J].

Chen, NF ;

He, HJ ;

Wang, YT ;

Lin, LY .

JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) :325-329

[50] OHMIC CONTACTS TO SEMI-INSULATING GAAS [J].

KAMINSKA, E ;

PIOTROWSKA, A ;

KNAP, W ;

TRAUTMAN, P .

ACTA PHYSICA POLONICA A, 1988, 73 (03) :501-503

← 1 2 3 4 5 →