GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM

被引:2
作者
SMITH, DA
GROVENOR, CRM
BATSON, PE
WONG, C
机构
关键词
D O I
10.1016/0304-3991(84)90117-7
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:131 / 134
页数:4
相关论文
共 19 条
[1]  
Bollmann W., 1972, CRYSTAL DEFECTS CRYS
[2]   DIFFUSION INDUCED GRAIN-BOUNDARY MIGRATION [J].
CAHN, JW ;
PAN, JD ;
BALLUFFI, RW .
SCRIPTA METALLURGICA, 1979, 13 (06) :503-509
[3]  
CAHN JW, 1982, ACTA MET, V30, P1133
[4]   CONTRAST FROM INCOHERENT TWIN INTERFACES OBSERVED USING THE WEAK-BEAM TECHNIQUE [J].
CARTER, CB ;
FOLL, H .
SCRIPTA METALLURGICA, 1978, 12 (12) :1135-1139
[5]  
Cunningham B., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P21
[6]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[7]   ON THE ATOMIC-STRUCTURE OF THE SIGMA=3, [112] TWIN IN SILICON [J].
FONTAINE, C ;
SMITH, DA .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :153-154
[8]   MECHANISM FOR THE EFFECT OF DOPING ON DISLOCATION MOBILITY [J].
HIRSCH, PB .
JOURNAL DE PHYSIQUE, 1979, 40 :117-121
[9]   MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .1. TILT ABOUT (10) [J].
HORNSTRA, J .
PHYSICA, 1959, 25 (06) :409-422
[10]   MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .2. TILT ABOUT (001) AND THEORY [J].
HORNSTRA, J .
PHYSICA, 1960, 26 (03) :198-208