GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS

[1] APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 81 - 84

[2] BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (12) : 1039 - 1043

[3] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2532 - 2536

[4] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3530 - 3542

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] MARTIN GM, 1982 P C SEM 3 5 MAT, P275

[7] SELF-ALIGNED TRANSISTOR WITH SIDEWALL BASE ELECTRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 596 - 600

[8] Ning T. H., 1980, International Electron Devices Meeting. Technical Digest, P823

[9] TANIGUCHI M, 1982 P C SEM 3 5 MAT, P283

[1] APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 81 - 84

[2] BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (12) : 1039 - 1043

[3] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2532 - 2536

[4] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3530 - 3542

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] MARTIN GM, 1982 P C SEM 3 5 MAT, P275

[7] SELF-ALIGNED TRANSISTOR WITH SIDEWALL BASE ELECTRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 596 - 600

[8] Ning T. H., 1980, International Electron Devices Meeting. Technical Digest, P823

[9] TANIGUCHI M, 1982 P C SEM 3 5 MAT, P283