GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS

被引:89
作者
ASBECK, PM
MILLER, DL
ANDERSON, RJ
EISEN, FH
机构
关键词
D O I
10.1109/EDL.1984.25927
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:310 / 312
页数:3
相关论文
共 9 条
[1]   APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ASBECK, PM ;
MILLER, DL ;
BABCOCK, EJ ;
KIRKPATRICK, CG .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :81-84
[2]   BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS [J].
BENEKING, H ;
GROTE, N ;
KRAUTLE, H .
SOLID-STATE ELECTRONICS, 1979, 22 (12) :1039-1043
[3]   SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].
FAVENNEC, PN .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536
[4]   EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3530-3542
[5]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25
[6]  
MARTIN GM, 1982 P C SEM 3 5 MAT, P275
[7]   SELF-ALIGNED TRANSISTOR WITH SIDEWALL BASE ELECTRODE [J].
NAKAMURA, T ;
MIYAZAKI, T ;
TAKAHASHI, S ;
KURE, T ;
OKABE, T ;
NAGATA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :596-600
[8]  
Ning T. H., 1980, International Electron Devices Meeting. Technical Digest, P823
[9]  
TANIGUCHI M, 1982 P C SEM 3 5 MAT, P283