BAND BENDING AND INTERFACE STATES FOR METALS ON GAAS

被引：44
作者：
VITURRO, RE
SHAW, JL
MAILHIOT, C
BRILLSON, LJ
TACHE, N
MCKINLEY, J
MARGARITONDO, G
WOODALL, JM
KIRCHNER, PD
PETTIT, GD
WRIGHT, SL
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期
关键词：
D O I：
10.1063/1.99578
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2052 / 2054
页数：3
相关论文
共 29 条
[11]   STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48
[12]   ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].
LAGOWSKI, J ;
GATOS, HC ;
PARSEY, JM ;
WADA, K ;
KAMINSKA, M ;
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344
[13]   SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].
LUDEKE, R ;
CHIANG, TC ;
MILLER, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587
[14]   METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110) [J].
LUDEKE, R ;
STRAUB, D ;
HIMPSEL, FJ ;
LANDGREN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :874-878
[15]  
MIRCEA A, 1979, I PHYS C SER, V46, P82
[16]  
MONCH W, 1987, PHYS REV LETT, V58, P1360
[17]   ON THE FERMI LEVEL PINNING BEHAVIOR OF METAL/III-V SEMICONDUCTOR INTERFACES [J].
NEWMAN, N ;
SPICER, WE ;
KENDELEWICZ, T ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :931-938
[18]   FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE [J].
PRIETSCH, M ;
DOMKE, M ;
LAUBSCHAT, C ;
KAINDL, G .
PHYSICAL REVIEW LETTERS, 1988, 60 (05) :436-439
[19]   UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY ;
CHYE, P .
PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423
[20]   PHOTOEMISSION-STUDIES OF THE BAND BENDING ON MBE-GROWN GAAS(001) [J].
SVENSSON, SP ;
KANSKI, J ;
ANDERSSON, TG ;
NILSSON, PO .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :235-239
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