INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN

被引:79
作者
REDDI, VGK
机构
关键词
D O I
10.1016/0038-1101(67)90017-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:305 / +
页数:1
相关论文
共 27 条
[1]  
ATALLA MM, 1962, Patent No. 3045129
[2]   ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J].
BALK, P ;
BURKHARD.PJ ;
GREGOR, LV .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2133-&
[3]   N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].
BROWN, WL .
PHYSICAL REVIEW, 1953, 91 (03) :518-527
[4]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[5]  
Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75
[6]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[7]   ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON [J].
GROVE, AS ;
FITZGERALD, DJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) :619-+
[8]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[9]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[10]   A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
SNOW, EH .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06) :894-+