INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN

[1] ATALLA MM, 1962, Patent No. 3045129

[2] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2133 - &

[3] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[4] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[5] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[7] ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 619 - +

[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[10] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +

[1] ATALLA MM, 1962, Patent No. 3045129

[2] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2133 - &

[3] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[4] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[5] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[7] ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 619 - +

[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[10] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +