DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON

被引:62
作者
WEBER, ER
ALEXANDER, H
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来源
JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期
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D O I
10.1051/jphyscol:1983438
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页码:319 / 328
页数:10
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[1]   INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON [J].
ALEXANDER, H ;
KISIELOWSKIKEMMERICH, C ;
WEBER, ER .
PHYSICA B & C, 1983, 116 (1-3) :583-593
[2]  
ALEXANDER H, 1978, J PHYSIQUE, V39, P114
[3]  
Brosious P. R., 1979, I PHYS C SER, V46, P248
[4]  
DROZDOV NA, 1976, JETP LETT+, V23, P597
[5]   PHOTO-EPR OF DISLOCATIONS IN SILICON [J].
ERDMANN, R ;
ALEXANDER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :251-259
[6]   RECOMBINATION AT DISLOCATIONS [J].
FIGIELSKI, T .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1403-1412
[7]  
GELLRICH N, 1978, THESIS KOLN
[8]  
GELLRICH N, 1978, VERH DTSCH PHYS GES, V13, P53
[9]  
GOTTSCHALK H, 1982, 10TH INT C EL MICR H, V2, P527
[10]  
GRAZHULIS VA, 1971, SOV PHYS JETP-USSR, V33, P623