Slew-Rate Enhanced Low-Dropout Regulator by Dynamic Current Biasing

被引:0
|
作者
Jeong, Nam Hwi [1 ]
Cho, Choon Sik [1 ]
机构
[1] Korea Aerosp Univ, Dept Informat & Telecommun Engn, Goyang, South Korea
关键词
Dynamic Current Biasing; Low-Dropout Regulator; Parasitic Capacitance; Slew-Rate;
D O I
10.5515/JKIEES.2014.14.4.376
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a 0.35-mu m high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as 9 mu s for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.
引用
收藏
页码:376 / 381
页数:6
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