OPTICAL HEATING OF ELECTRON-HOLE PLASMA IN SILICON BY PICOSECOND PULSES

被引：38

作者：

LOMPRE, LA ^{[1
]}

LIU, JM ^{[1
]}

KURZ, H ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / 5

页数：3

共 8 条

[1] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J].

LIETOILA, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :624-626

[2] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

LIU, JM ;

YEN, R ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

[3] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646

[4] TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON [J].

LOMPRE, LA ;

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :168-170

[5] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION [J].

SVANTESSON, KG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (03) :425-436

[6]

VANDRIEL H, UNPUB

[7] OBSERVATION OF AN ELECTRONIC PLASMA IN PICOSECOND LASER ANNEALING OF SILICON [J].

VONDERLINDE, D ;

FABRICIUS, N .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :991-993

[8] SPACE-TIME RESOLVED REFLECTIVITY MEASUREMENTS OF PICOSECOND LASER-PULSE INDUCED PHASE-TRANSITIONS IN (111) SILICON SURFACE-LAYERS [J].

YEN, R ;

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03) :153-160

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