POINT-DEFECTS IN GAP, GAAS, AND INP

被引:59
作者
KAUFMANN, U
SCHNEIDER, J
机构
来源
ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS | 1982年 / 58卷
关键词
D O I
10.1016/S0065-2539(08)61022-7
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:81 / 141
页数:61
相关论文
共 253 条
[1]  
ABAGYAN SA, 1975, SOV PHYS SEMICOND+, V9, P243
[2]  
ABAGYAN SA, 1974, SOV PHYS SEMICOND+, V7, P989
[3]  
ABAGYAN SA, 1976, SOV PHYS SEMICOND, V10, P1956
[4]  
ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1
[5]  
ALLEGRE J, 1979, C SER I PHYS, V46, P379
[6]  
Altarelli M., 1980, Journal of the Physical Society of Japan, V49, P169
[7]  
ANDRIANOV DG, 1976, SOV PHYS SEMICOND+, V10, P696
[8]  
[Anonymous], 1977, SEMICONDUCTOR LASERS
[9]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[10]  
AVEN M, 1967, PHYSICS CHEM 2 6 COM