ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPER-LATTICES

被引:44
作者
CHU, WK
SARIS, FW
CHANG, CA
LUDEKE, R
ESAKI, L
机构
[1] FOM,INST ATOOM & MOLEC FYS,1098 SJ AMSTERDAM,NETHERLANDS
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 04期
关键词
D O I
10.1103/PhysRevB.26.1999
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1999 / 2010
页数:12
相关论文
共 23 条
[1]   MECHANISM OF ION DECHANNELING IN COMPOUND SEMICONDUCTOR SUPER-LATTICES [J].
BARRETT, JH .
APPLIED PHYSICS LETTERS, 1982, 40 (06) :482-484
[2]   CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS [J].
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E ;
PICRAUX, ST .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :371-376
[3]   MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761
[4]   SUBSTRATE EFFECT ON THE LATTICE-CONSTANTS OF THE MBE-GROWN IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
SEGMULLER, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :285-287
[5]   SEMICONDUCTOR SUPER-LATTICES BY MBE AND THEIR CHARACTERIZATION [J].
CHANG, LL ;
ESAKI, L .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :3-14
[6]   STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHANG, LL ;
ESAKI, L ;
HOWARD, WE ;
LUDEKE, R ;
SCHUL, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :655-662
[7]   SUB-BAND DIMENSIONALITY IN SEMICONDUCTOR SUPER-LATTICES [J].
CHANG, LL .
SURFACE SCIENCE, 1978, 73 (01) :226-228
[8]  
CHANG LL, 1975, EPITAXIAL GROWTH A, P37
[9]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[10]   GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD [J].
CHO, AY .
APPLIED PHYSICS LETTERS, 1971, 19 (11) :467-&