ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM

被引：57
作者：
DAVIES, LW
机构：
来源：
NATURE | 1962年 / 194卷 / 4830期
关键词：
D O I：
10.1038/194762a0
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
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页码：762 / &
相关论文
共 5 条
[1]  
CHAPMAN S, 1951, MATHEMATICAL THEORY
[2]  
DINGLE RB, 1955, PHILOS MAG, V46, P831
[3]   THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J].
FLETCHER, NH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06) :862-872
[4]   THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J].
JOHNSON, VA ;
LARKHOROVITZ, K .
PHYSICAL REVIEW, 1951, 82 (06) :977-978
[5]   MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].
LEDERHANDLER, SR ;
GIACOLETTO, LJ .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04) :477-483
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