EFFECTS OF O-3 ON GROWTH AND ELECTRICAL-PROPERTIES OF PB(ZR, TI)O-3 THIN-FILMS BY PHOTOENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Effects of O-3 On the growth and electrical properties of Pb(Zr, Ti)O-3 (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using O-3 at substrate temperatures ranging from 560 degrees C to 625 degrees C. The crystalline orientation, growth rate and growth temperature were not appreciably influenced by the use of O-3 and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O-3 and photoirradiation was observed. From scanning electron microscope (SEM) observations, it was found that this improvement may be caused by the microscopic change in him structure.