TEMPERATURE-DEPENDENT CREATION OF LIGHT-INDUCED DEFECTS IN A-SI-H SCHOTTKY-BARRIER DIODES

被引：9

作者：

GLADE, A

BEICHLER, J

MELL, H

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90683-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：397 / 400

页数：4

共 9 条

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[2]

BEICHLER J, 1982, 4TH P EC PHOT SOL EN, P448

[3] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[4] FREQUENCY AND TEMPERATURE-DEPENDENCE OF THE SPACE-CHARGE CAPACITANCE IN A-SI-H FILMS [J].

GLADE, A ;

FUHS, W ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :269-272

[5] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].

HAN, D ;

FRITZSCHE, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400

[6] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476

[7]

PIERZ K, 1985, J NON-CRYST, V77, P397

[8] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[9] PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED A-SI-H [J].

TANIELIAN, MH ;

GOODMAN, NB ;

FRITZSCHE, H .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :375-378

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