OXIDATION BEHAVIOR OF PD-SI COMPOUNDS

被引:31
作者
CROS, A [1 ]
POLLAK, RA [1 ]
TU, KN [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0040-6090(83)90565-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:221 / 225
页数:5
相关论文
共 12 条
[1]   INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION [J].
ABBATI, I ;
ROSSI, G ;
CALLIARI, L ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :409-412
[2]   SILICON L2,3VV AUGER LINESHAPE AND OXYGEN-CHEMISORPTION STUDY OF PD4SI [J].
BADER, SD ;
RICHTER, L ;
BRODSKY, MB ;
BROWER, WE ;
SMITH, GV .
SOLID STATE COMMUNICATIONS, 1981, 37 (09) :729-732
[3]   PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J].
CANALI, C ;
MAJNI, G ;
OTTAVIANI, G ;
CELOTTI, G .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :255-258
[4]  
CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5
[5]   CATALYTIC ACTION OF GOLD ATOMS ON THE OXIDATION OF SI(111) SURFACES [J].
CROS, A ;
DERRIEN, J ;
SALVAN, F .
SURFACE SCIENCE, 1981, 110 (02) :471-490
[6]   CHEMICAL BONDING AND CHARGE REDISTRIBUTION - VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE NI/SI, PD/SI, AND PT/SI SYSTEMS [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :680-683
[7]   OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
SCOTT, DM ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :641-648
[8]   ELECTRONIC STATES AND MICROSTRUCTURE AT THE SILICIDE-SILICON INTERFACE [J].
HO, PS ;
RUBLOFF, GW .
THIN SOLID FILMS, 1982, 89 (04) :433-446
[9]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON [J].
HOLLINGER, G ;
JUGNET, Y ;
PERTOSA, P ;
DUC, TM .
CHEMICAL PHYSICS LETTERS, 1975, 36 (04) :441-445
[10]  
LEY L, 1977, 7TH P INT VAC C 3RD, P2031