RELATIVE PERMITTIVITY MEASUREMENT OF THICK-FILM DIELECTRICS AT MICROWAVE-FREQUENCIES

被引：6

作者：

HUANG, H ^{[1
]}

FREE, CE ^{[1
]}

PITT, KEG ^{[1
]}

BERZINS, AR ^{[1
]}

SHORTHOUSE, GP ^{[1
]}

机构：

[1] KONSERQ LTD,READING RG4 9NH,BERKS,ENGLAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 21期

关键词：

PERMITTIVITY MEASUREMENT; CAVITY RESONATORS; THICK FILM CAPACITORS; MICROWAVE MEASUREMENTS;

D O I：

10.1049/el:19951243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel extention of the resonant cavity technique used to measure relative permittivity at microwave frequencies is presented. The new technique is aimed particularly at the measurement of very thin dielectric layers and has been used to measure the permittivity of a thin dielectric layer printed onto a thick substrate date had been obtained for 100 mu m thick dielectrics at X-band.

引用

页码：1812 / 1814

页数：3

共 7 条

[1]

CAZENAVE JP, 1994, SOLID STATE TECH MAY, P47

[2] DIELECTRIC MATERIAL MEASUREMENT OF THIN SAMPLES AT MILLIMETER WAVELENGTHS [J].