STRUCTURE AND DIELECTRIC-PROPERTIES OF SRTIO3 FILMS PREPARED BY PULSED-LASER DEPOSITION TECHNIQUE

被引：18

作者：

YEH, MH ^{[1
]}

LIU, KS ^{[1
]}

LIN, IN ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU 30043,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期

关键词：

SRTIO3; FILMS; PULSED LASER DEPOSITION;

D O I：

10.1143/JJAP.34.2447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strontium titanate thin films have been prepared on Pt-coated and p-type bare Si(100) substrates by a pulsed laser deposition technique. Both the substrate temperature and the oxygen pressure substantially affected the crystal structure, microstructure and texture characteristics of the SrTiO3 films. The (110)-textured films were obtained at 650 degrees C under oxygen pressure of 1 mbar. The apparent dielectric constants increased with the thickness of the films and was accounted for by the formation of the low-dielectric-constant interacting layer, which was connected with the SrTiO3 films in series. The true dielectric constant of the (110)-textured SrTiO3 films was estimated to be K-STO = 239 (100 kHz).

引用

页码：2447 / 2452

页数：6

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