LIGHT-INDUCED EFFECTS IN THE INTERBAND ABSORPTION OF SEMICONDUCTORS

被引：9
作者：
JAHNKE, F
HENNEBERGER, K
机构：
[1] Institut F̈r Physik, Hochschule G̈strow
来源：
PHYSICAL REVIEW B | 1992年 / 45卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.45.4077
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the intense laser excitation of a semiconductor in the interband absorption region. In addition to optical nonlinearities caused by the generated electron-hole plasma, we present a treatment of the nonlinearities induced by the resonant interaction (interband optical Stark effect) between band states. Numerical results demonstrating the underlying physics are given in the limit of high laser intensity.
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页码：4077 / 4088
页数：12
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