MODELING OF INTEGRATED-CIRCUIT DEFECT SENSITIVITIES

被引：129

作者：

STAPPER, CH

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1983年 / 27卷 / 06期

关键词：

D O I：

10.1147/rd.276.0549

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：549 / 557

页数：9

共 13 条

[1]

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[2]

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[4] MODIFICATION OF POISSON STATISTICS - MODELING DEFECTS INDUCED BY DIFFUSION [J].

PAZ, O ;

LAWSON, TR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) :540-546

[5]

SEEDS RB, 1967, 1967 INT EL DEV M KE, P12

[6]

SEEDS RB, 1967, 1967 IEEE INT CONV 6, P60

[7]

Stapper C. H., 1982, 1982 IEEE International Solid-State Circuits Conference Digest of Technical Papers, P12

[8] DEFECT DENSITY DISTRIBUTION FOR LSI YIELD CALCULATIONS [J].

STAPPER, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (07) :655-657

[9] EVOLUTION AND ACCOMPLISHMENTS OF VLSI YIELD MANAGEMENT AT IBM [J].

STAPPER, CH ;

CASTRUCCI, PP ;

MAEDER, RA ;

ROWE, WE ;

VERHELST, RA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1982, 26 (05) :532-545

[10] INTEGRATED-CIRCUIT YIELD STATISTICS [J].

STAPPER, CH ;

ARMSTRONG, FM ;

SAJI, K .

PROCEEDINGS OF THE IEEE, 1983, 71 (04) :453-470

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