共 50 条
- [41] RADIATION ENHANCED OUTDIFFUSION DURING ION-IMPLANTATION APPLIED PHYSICS, 1979, 19 (02): : 199 - 203
- [42] ION-BEAM ANALYSIS AND ION-IMPLANTATION IN THE STUDY OF DIFFUSION JOURNAL OF METALS, 1983, 35 (08): : A50 - A50
- [43] DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 589 - 614
- [45] ION-IMPLANTATION CONTROL OF STOICHIOMETRY OF 2-6 SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 189 - 191
- [46] ION-IMPLANTATION AND CATALYSIS - ELECTROCHEMICAL APPLICATIONS OF ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 875 - 885
- [47] ION-IMPLANTATION DOPING AND ISOLATION OF III-V SEMICONDUCTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 970 - 977